savantic semiconductor product specification silicon npn power transistors 2sd1274 2SD1274A 2sd1274b d escription with to-220fa package high v c bo high speed switching applications power amplifier applicaitons pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2sd1274 150 2SD1274A 200 v cbo collector- base voltage 2sd1274b open emitter 250 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a t c =25 40 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sd1274 2SD1274A 2sd1274b characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a, l=25mh 80 v v (br)ebo emitter-base breakdown voltage i e =1ma, i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 1.6 v v be base-emitter voltage i c =5a ; v ce =4v 1.5 v 2sd1274 v cb =150v; i e =0 2SD1274A v cb =200v; i e =0 i cbo collector cut-off current 2sd1274b v cb =250v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe dc current gain i c =5a ; v ce =4v 14 f t transition frequency i c =0.5a ; v ce =10v 40 mhz t f fall time i c =5a ;i b1 =0.8a v eb =-5v 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2sd1274 2SD1274A 2sd1274b package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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